a d v a n c e d s e m i c o n d u c t o r, i n c. rve. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1202 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. none characteristics t c = 25 o c symbol test conditions minimum typical maximum units v br i r = 10 a 300 v c j v r = 50 v f = 1.0 mhz v r = 40 v 0.2 pf r s i f = 50 ma f = 100 mhz 0.6 ohms t l i f = 10 ma i r = 6.0 ma 1000 ns t rr i f = 20 ma i r = 100 ma 100 ns o r thermal resistance 20 o c/w silicon pin diode chip AP300A-00 description: the AP300A-00 is a passivated epitaxial silicon pin diode housed in a hermetically sealed glass package. this device is designed to cover a wide range of control applications such as rf switching,phase shifting, modulation, duplexing limiting and pulse forming. maximum ratings i f 100 ma v r 300 v p diss 250 mw @ t a = 25 o c package style 01
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